Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications

Nickel oxide (NiO) is a p-type and nitrogen one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical electrical properties than those pure NiO. In this work, we present (NiO:N) thin films with enhanced compared to undoped film. The NiO:N were grown at room temperature by sputtering using plasma containing 50% Ar (O2 + N2) gases. film was oxygen-rich, single-phase cubic NiO, having transmittance less 20%. Upon doping nitrogen, became more transparent (around 65%), had wide direct band gap (up 3.67 eV) showed clear evidence indirect gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. changes such as structural disorder, energy Urbach states resistivity correlated incorporation their structure. optimum form diode spin-coated, mesoporous top compact, TiO2 hybrid NiO:N/TiO2 heterojunction showing good output characteristics, deduced both I-V Cheung’s methods, which further improved upon thermal treatment. Transparent can be realized all-oxide flexible optoelectronic devices.